Influence of electromagnetic pollution of the electron beam generator and high-energy radioactive source on the memory components

The study considers the impact of environmental contamination by electromagnetic radiation electron beam generator and high-energy radioactive source on memory components. Electron can be used for injecting particle energy into plasma fusion system based a Marx generator, while as simulator ionizing that caused neutron-induced activation surrounding structures or released from deuterium-tritium reaction. effects gamma electric field EPROM EEPROM semiconductor computer memory, were investigated. An older types deliberately chosen reason their more robust construction will better protect them non-ionizing radiation. results obtained under well-controlled conditions show high degree non-resistance technology to expected pollution source. This conclusion raises doubts possibility simultaneous application consequently nanotechnologies with increasing need miniaturization electronic